DC and microwave characterization

         XMOD and its partner is an european leader in term of microwave measurement services. Indeed, we provide a complete characterisation service to our customers up to 110GHz. For more information, please click on the following links:

CW and pulsed Sij Parameters			Static and Pulsed IV
Multi-Harmonic loadpull up to 40GHz			Noise Figure up to 110GHz
Two tones up to 40GHz			Recovery Time

High and low temperature characterization

Different noise characterization

A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Mavredakis, N. Makris, R. K. Sharma, P. Sakalas and M. Schröter "CMOS Small-Signal and Thermal Noise Modeling at High Frequencies" IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 11, NOVEMBER 2013

A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Makris, R. K. Sharma, P. Sakalas and M. Schröter "CMOS RF Noise, Scaling, and Compact Modeling for RFIC Design​" 2013 IEEE Radio Frequency Integrated Circuits Symposiumpp. 53-56

A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Mavredakis, N. Makris, R. K. Sharma, P. Sakalas, M. Schröter "CMOS Small-Signal and Thermal Noise Compact Modeling at High Frequencies" IEEE Trans. on Electron Devices. vol. 60, no. 11, pp. 3726-3732, Nov. 2013

P.Sakalas, M. Schröter "Microwave noise  in InP and SiGe HBTs: Modeling and Challenges" Proceedings of the 22th Int. Conf. on Noise and Fluctuations, Montpellier, June 23-29, 2013 Montpellier, France - June 24-28, 2013

M. Emam, P. Sakalas, A. Kumar3, J. Ida4, D. Vanhoenacker-Janvier, J.-P. Raskin and F. Danneville "Graded Channel Concept for Improving RF Noise of an Industrial 0.15 µm SOI CMOS Technology" Proceedings of the 5th European Microwave Integrated Circuits Conferencepp. 170-173

J. M. López-González, P. Sakalas, M.Schröter "Analytical modelling of 200GHz SiGe HBT high-frequency noise parameters"Semicond. Sci. Technol. 25 (2010) 105011 (10pp)

A. Shimukovitch, P. Sakalas, P. Zampardi, M. Schröter and A. Matulionis "Investigation of electron delay in the base on noise  performance in InGaP heterojunction bipolar transistors" Phys. Status Solidi RRL 4, No. 11, 335–337 (2010) / DOI 10.1002/pssr.201004340

P. Sakalas, M. Ramonas, M. Schröter, C. Jungemann, A. Shimukovitch, W. Kraus "Impact Ionization noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results" in IEEE TRANSACTIONS ON ELECTRON DEVICES,VOL.56,NO.2,FEBRUARY2009, pp. 328-336

P. Sakalas, M. Schröter, H. Xing, D. Jena, J. Simon, J. Liberis, A. Shimukovich, A. Matulionis, "Investigation of high frequency noise and power in AlGaN/GaN HEMTs" Proc. 9th Int.Conf. Noise and Fluctuations, Tokyo, Japan, Vol. 922, (ed. M. Tacano, Y. Yamamoto, M.Nakao, Melville, New York), pp. 171-174, 2007.

P.Sakalas, A.Chakravorty, M.Schröter, M.Ramonas, J.Herricht, A.Shimukovitch, C.Jungemann, "Modeling of High Frequency  Noise in SiGe HBTs" Proc. SISPAD, Monterey,CA, pp. 271-274, 2006.