Job Description
You will be spearheading our company’s device modeling activities for different technologies (SOI, III-V, CMOS, Bipolar, Power MOS, Superjunction, Diode....).

- Setup the infrastructure.
- Develop behavioral or (semi) mathematical PSipce/HSpice models for SOI, RF, CMOS, low and high voltage Power Discrete Semiconductors such as IGBT, Superjunction, Diodes, Trench MOS and co-packaged IGBT+FRD products.
- Develop test keys and methodology for rapid parameter extractions.
- Optimize products performance and derive design guidelines to ensure optimum device performance is met.
Qualifications Required
-Master level or higher education in Microelectronics, Electrical Engineering, Semiconductor Physics or equivalent
- Expert knowledge in semiconductor device physics and the modeling of RF, CMOS,III-V high voltage devices electrical behavior.
- Deep understanding of the interactions between fabrication processing and device behavior.
- Experienced in test key design and parameter extraction.
- PSpice equivalent circuit and knowledge of electro thermal behavior of power devices.
- Working knowledge of modeling software (e.g. PSPICE).