CW and pulsed Sij Parameters

     Sij Parameters measurements under static or pulsed conditions. Thanks to its pulsed IV systems and the last generation of vector network analysers, Sij measurements can be done for small duty cycles (< 1%) and short pulse widths. These measurements are useful for linear and non linear electrical modelling.

Static and Pulsed IV

 Static and pulsed IV measurements  are perfectly adapted to characterize FET, bipolar transistors or diodes used for linear or non linear applications (LNA, PA, DC/DC converters...). IV measurements under pulsed conditions are well suitable to analyse thermal and traps effects but also for electrical modelling.

		Pulsed IV Up to 200V-4A – Pulse width down to 200ns Up to 600V-20A – Pulse width down to 1µs		Static IV Up to 600V-5A
	Example of a ID(VD,VG) characteristics of GaN FET measured under pulsed condition up to 600V and 20A

Multi-harmonic loadpull 

    multi-harmonic active loadpull setups to characterize two ports devices under large condition. The loadpull approach has been improved following the frequency of interest, the maximum output power and the mismatch of the devices. The loadpull bench can work following several settings:

► Only in active setting for small devices at high frequency (>8GHz)

► Only in passive for large devices (>30W) at frequency below 18GHz

► In mixed mode using the active and passive capabilities

	Multi-Harmonic loadpull (passive and/or active) Under microwave probes or in fixture Matching only @ F0 up to 50GHz Matching @ F0 and 2F0 (or 3F0) up to 18GHz Measured vector values @ each harmonic: S11, S21, ZL, ZS Measured scalar values: Pin, Pout, GP, GT, PAE, voltages, currents
	Example of loapull results @ 1.4GHz on GaN transistor giving 230W of output power (Circles @ Pin=CST and Pout(Pin) @ ZLopt)

Noise Figure up to 110GHz

   innovative setups to measure noise figure of two ports devices up to 110GHz. The approach is based on the cold method and used a full vector correction to obtain accurate results up to 110GHz on very mismatched devices (MOS, HEMT, HBT...).

	4 Noise Parameters up to 50GHz Under microwave probes or in fixture Full Bandwidth : 500MHz - 6GHz 5 - 50GHz Accuracy: +/- 0.15dB @ 50GHz			Noise figure up to 110GHz Under microwave probes or in fixture Full Bandwidth : 75 - 107GHz Under 50 ohms Accuracy: +/- 0.25dB @ 107GHz
	Example of 4 noise parameters and available gain versus frequency up to 40GHz of a InP HEMT devic

Two tones

    two tones measurements to analyse the lineary behaviour of two ports devices. The linearity bench shows a high dynamic to measure the components under small or large signal without modifying the architecture of the setup.The study can be done by varying the load impedance at the output of the device for a constant input or output power. Memory effects can be studied by modifying the cutt off frequency of the used bias tees and/or the impedance presented by the DC power supplies.

Recovery time

    an innovative solution to accurately measure the recovery time of two ports devices. The architecture of the setup has been optimised to measure versus time the electrical characteristics of the device under test during and after the agression without losing information between both states. These measurements can be done by adjusting the load impedance presented at the output of the device.

	Recovey time Under microwave probes or in fixture Bandwidth : 100MHz - 18GHz Pulse width range : 1µs to 10ms Minimum time step : 10ns Duty cycle : 1-50% Measured vector values versus time : S11, S21, ZL, ZS Measured scalar value versus time :Pin, Pout, GP, GT, PAE, voltages and currents
	Example of recovery time measurement on a wide band gap device. PW=1µs, duty cycle=10%, F=10GHz, Compression level =40dB