GaN RF/Microwave Device Technology , and Device Modeling with ASM-HEMT Model |
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Dr. Sourabh Khandelwal-
Dr. Sourabh Khandelwal is the lead author of industry standard ASM-HEMT model at the CMC (See: https://si2.org/cmc/). His research on GaN modeling with ASM-HEMT is funded by multi-national companies including Cree USA, Analog Devices USA, Northrop Grumman USA, Ampleon Netherlands, EPC USA, and Qorvo USA. Dr. Khandelwal was Postdoctoral researcher at the BSIM group at the University of California Berkeley USA from 2013 to 2017. He is currently Senior Lecturer/Assistant Professor at the Macquarie University Sydney. He is a nominated member of the IEEE Microwave Theory and Techniques Design Automation Committee. He has published over 150 research papers, and 2 books on semiconductor device modeling and simulations.
GaN RF/Microwave Device Technology: 2 hours 30 mins + 30 mins (Q & A)
· GaN device operation
· GaN device fabrication flow
· GaN HEMT device design process and the device design tradeoffs
· Emerging GaN device architectures
o Self-aligned GaN devices for W-band and G-band applications
o Superlattice castellated three-dimensional GaN for best-in-class GaN switches
GaN Non-linear Device Modeling with ASM-HEMT: 2 hours 30 mins + 30 mins (Q & A)
· ASM-HEMT Model overview
· I-V modeling with ASM-HEMT
· Non-linear large signal modeling flow with ASM-HEMT model
o De-embedding methods for accurate modeling
o Small-signal modeling with ASM-HEMT
o Large signal modeling with ASM-HEMT
· Trapping effects in GaN HEMTs and their modeling with ASM-HEMT
· GaN power amplifier circuits
o Non-linearity, AM/PM nonlinearity analysis
o Importance of accurate field-plate modeling in GaN HEMTs
· Circuit-Device Co-optimization with ASM-HEMT for optimal performance
