集成电路培训中心ICTC邀请器件建模领域的权威Bertrand Ardouin博士、Thomas Zimmer教授来上海讲授器件建模设计的高级培训课程，以及在法国ST有长期RF-SOI模型经验的Raphael Valentin 博士做专题邀请报告。

 

课程内容：                 

                     

本课程属于器件模型设计高级课程，适合具有一定基础的学员：偏重器件模型设计中的实际问题，比如如何看待基于物理意义的模型和纯拟合模型，特殊环境下的模型，以及如何判断模型对于设计的好坏。特别讨论了当前比较关心的模型，比如ELECTRO-THERMAL，RELIABILITY等问题。另外，高频下的测量和目前比较热门的RF-SOI模型也作了阐述。最后，对将来热门的新材料也做了展望，也同时对目前的模型参与者提出了有趣的研究方向。课程具体内容包括：

 

1、Introduction to compact modeling&specific model(Dr. Ardouin)

a、Advantages of physics based modeling over pure fitting models

b、Statistical modeling approaches

c、EDA tools, environments and flows related issues

d、Specific modeling examples: High temperature models, low temperature models,RF models

e、Q/A validation (circuit level)

2、What is necessary for a good model ? Part A/B (Dr. Ardouin)

a、Measurements

b、Measurements verification & validation

c、Compact Models: a brief review and history of (BSIM3/4, EKV, PSP, HiCUM, VBIC, Angelov)

d、Test chip, test structures: which strategy for DC & RF?

e、Extraction tools: which strategy for which model? (Global fitting, Binning, local extraction, accuracy criterion, etc.)

f、What is the impact on DESIGN? There’s no "one fits all model"

3、RF/Noise compact modeling of PD SOI CMOS technology (Dr. Valentin，invited)

 

4、Electro-thermal characterization of advanced technologies(Prof. Zimmer)

a、Measurements: Low frequency S-parameter measurements, pulsed DC and AC measurement​

b、TCAD simulation

c、Electro-thermal compact model

d、Application to SiGe-HBT

e、Application to 28nm CMOS

f、Impact on circuit level

5、RF measurement methodology up to 100GHZ (Dr. Ardouin)

a、Frequency limitation of calibration and de-embedding technique for S parameter

b、EM simulation

6、Reliability related compact modeling with emphasis on life time prediction (Dr. Ardouin )

a、Importance of reliability aware model

b、Degradation mechanism and combination of aging model

c、Transistor compact model

d、Case study and reliability aware circuit

7、Outlook:"Graphene electronics: how far from industrial applications” (Prof. Zimmer)