International MOS-AK Workshop , Beijing, China June 14-16, 2018


Successful and Verified RF Measurements for Device Modeling                              （14th. June, 2018）

TIMETOPIC


9:00

Impedance Measurements
    Impedance Measurements - the Smart Enhancement for CV Meas.
    Interpreting Impedance Measurements 
    Distortion by Connectors and Cables in Measurement Setup
   CV Measurements - a Special Case of Impedance Measurements
    Example:  Diode Impedance Modeling 


10:15-10:30

BREAK


10:30

S-Parameter Measurements
     S-Parameter Basics for Device Modeling Engineers
     Calculating Device Characteristics from S-Parameters
     Overdriven Spar
     TwoPort Matrix Definitions and Application of Matrix Elements
     Matrix Conversions N-Port


11:30

LUNCH


13:00

S-Parameter Measurements  (cont'd)
     Calculating Branch-to-Branch Impedances of Multi-Ports
     TwoPort Matrices of Basic Schematics  (TEE, PI etc.)
     De-Embedding
     Successful S-Parameter Measurements and their Verif.              VIDEO
     Successful S-Parameter Measurements and their Verification  step-by-step


14:30-14:45

BREAK


14:45

Large-Signal RF Measurements
     Successful Nonlinear-RF Measurements

      NVNA Measurement Principle

     - NVNA Calibration

     - NVNA Measurement Quality Verification

     - The NVNA Measurement Result: Magnitude and Phase of Harmonics

     - Synchronizing NVNA Measurement Results with Harmonic Balance Simulation Results

     - Device Modeling Opportunities 

      Data Verification


16:15

Q&A

Dr.-Ing. Franz Sischka, 


Franz Sischka studied electronic communication engineering at the University of Stuttgart,
Germany, where he received his Diplom-Ingenieur and Dr.-Ing. (Ph.D.) degrees in 1979 and
1984. After joining Hewlett-Packard in Boeblingen/Germany, he worked for 5 years in R&D

in the Boeblingen Instruments Division, fiber optics group.


From 1989 to 2012, he worked as consultant for HP/Agilent-EEsof's device modeling

software IC-CAP. During that time, he has developed several modeling strategies for diodes, bipolar and GaAs/GaN transistors, as well as for passive components like spiral inductors,capacitors, and also methods to verify the measurement quality before applying device modeling. During this time, he has organized over10 IC-CAP User Meetings in Europe, and is the author of a big part of the examples directory in the Agilent/Keysight IC-CAP software. He also developed and lectured the IC- CAP Learning Week workshops in Europe, and is the author of Agilent's (now Keysight) ICCAP Modeling Handbook

Example: