Lixi Yan received the B.Sc. degree in Electrical Engineering from the Southeast University in China in 2012, and the M.Sc. degree in Information Technology from University of Stutgart in 2016 in Germany. From 2016 to 2020, she joined the Institute of Robust Power Semiconductor Systems at the University of Stuttgart as research assistant pursuing the Ph.D. degree with topic circuit-design oriented modeling and simulation of modern power transistors. Since 2020 she works as a development engineer at Robert Bosch GmbH in Germany for modeling and simulation of power transistors.