Nowadays pulsed IV measurements are the preferred method for capturing current-voltage characteristics of active devices like field effect and bipolar transistors for nonlinear modelling and/or physical analysis. Pulsed IV characteristics allow thermal and trap effects studying making this method suitable for power microwave transistors or amplifiers based on new semiconductor technologies (wide band gap). APMS2014RA is a full automated pulsed IV/RF measurement setup and has been developed by experts in modelling and microwave characterization
Microwave devices
a range of microwave products from DC up to millimeter wave frequencies dedicated to low and/or high power applications. The product list is given hereafter by category. Custom products can also be developed. For more details, please contact us.
HIGH POWER AMPLIFER:
Reference | Frequency band | BW (GHz) | P1dB (dBm) | Psat (dBm) | GPLin (dB) | NF (dB) | Input matching (dB) | Output matching (dB) | RF-Connectors IN/OUT | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|
| HPA005W80-100G | W | 80 - 100 | 17 | 20 | 20 | - | <-10 | <-10 | WR10/WR10 | |
| HPA10W25-6G | S-C | 2.5 - 6 | 40 | 44 | 35 | - | <-15 | <-15 | SMA/SMA | |
| HPA10W3-9G | 3 - 9 | 40 | 35 | <7 | <-15 | <-15 | SMA/SMA |  | ||
| HPA10W8-12G | X | 8 - 12 | 40 | 42.5 | 45 | <7 | <-15 | <-15 | N/N | |
| HPA1W2-18G | Broadband | 2 - 18 | 27 | 30 | 23 | - | <-10 | <-10 | SMA/SMA | |
| HPA25W08-2G | L | 0.8 - 2 | 44 | 47 | 50 | - | <-15 | <-15 | N/N | |
| HPA35W8-12G | X | 8 - 12 | 45.5 | 47 | 40 | - | <-15 | <-15 | N/N | |
| HPA3W18-24G | K | 18 - 24 | 35 | 37 | 45 | - | <-10 | <-10 | K/K | |
| HPA3W26-31G | Ka | 26 - 31 | 35 | 37 | 40 | - | <-10 | <-10 | K/K | |
| HPA4W31-37G | Ka | 31 - 37 | 36 | 39 | 40 | - | <-10 | <-10 | K/K | |
| HPA60W2-4G | S | 2 - 4 | 48 | 50 | 40 | - | <-15 | <-15 | SMA/SMA | |
BIAS TEE
Reference | BW (GHz) | RF Pmax (W) | VDCmax (V) | IDCmax(A) | Input matching (dB) | Output matching (dB) | RF Connectors IN/OUT | Datasheet |
|---|---|---|---|---|---|---|---|---|
| BT6G600V7A | 0.1 - 6 | 10 | 600 | 7 | < -20 | < -20 | SMA/SMA | |
| BT6G200V3A | 0.1 - 6 | 5 | 200 | 3 | < -20 | < -20 | SMA/SMA | |
| BTDC6A6G | 0.3 - 6 | 5 | 600 | 5 | < -25 | < -25 | SMA/SMA | |
| BTDC7A12G20W | 0.1 - 12 | 20 | 200 | 7 | < -15 | < -15 | SMA/SMA | |
| HBT01810W | 0.1 - 18 | 10 | 200 | 3 | < -15 | < -15 | SMA/SMA | |
| BT40G200V1A | 0.03 - 40 | 3 | 100 | 1 | < -15 | < -15 | K/K | |
| BT50G200V025A | 0.03 - 50 | 1 | 200 | 0.25 | < -15 | < -15 | 1.85/1.85 |
MIXER:
Reference | Type | BW LO (GHz) | BW RF (GHz) | BW IF (GHz) | Conv. loss (dB) | PLO (dBm) | NF (dB) | P1dB (dBm) | Matching (dB) LO/RF/IF | Supply (V) | RF Connectors LO/RF/IF | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MXSSB15-50G | Image rejection mixer | 15 - 50 | 15 - 50 | DC - 5 | < 10 | > 10 | 10 | 10 | -10 / -15 / -10 | 0.4 | K/K/SMA | |
| MXDSBDC-50G | Double side band mixer | DC - 50 | DC - 50 | DC - 1 | < 8 | > -10 | - | - | -15 / -15 / -15 | -6 | K/K/SMA |
MEDIUM&LOW NOISE AMPLIFER:
Reference | Frequency band | BW (GHz) | P1dBMin (dBm) | GPLinMin (dB) | NF (dB) | Input matching (dB) | Output matching (dB) | PDC (W) | RF-Connectors IN/OUT | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|
| LNA05-2G | L | 0.5 - 2 | 20 | 50 | < 0.8 | < -10 | < -10 | 0.35 | SMA/SMA | |
| LNA05-6G | L - C | 0.5 - 6 | 9 | 14 | <3 | <-11 | <-12 | 0.1 | SMA/SMA | |
| LNA26-43G | Ka | 26 - 43 | 10 | 19 | <3.5 | <-10 | <-10 | < 0.2 | K/K | |
| MPADC-40G | - | DC - 40 | 18 | 13 | <6 | <-12 | <-12 | <1.5 | K/K | |
| LNA005W80-100G | W | 80 - 100 | - | 20 | < 5.5 | <-10 | <-10 | < 0.2 | WR10/WR10 |
Characterisation and reliability systems
双击此处添加文字PULSED I-V SYSTEM UP TO 1000V & 20A
Specifications
Intelligent software
• Intuitive GUI
• Batch available (autonomous system)
• Several modes of convergence
• Several modes of pulsed conditions
• Pulse profile
Two compact pulsers available
• High power : APMS-HPM
• Low power: APMS-LPM
• Very compact pulsers designed to be placed closer to the DUT (on probe station)
• Pulser architecture designed for overshoots reduction
High voltage filter
• Drive negative current
• Electronic Fuse
We offers a Multi-harmonic active loadpull system working in the frequency range 1 – 40GHz. This setup is based on a vector network analyser associated with a specific millimeter wave test set and three high power amplifiers developed The active loadpull system is perfectly adapted to characterize high power transistors under probes, in fixture or in package. It is based on an elaborated software offering a wide spectrum of measurement possibilities.
Loadpull testbench
Active loadpull testset
Circle measurement
Power measurement
Specifications
► Intelligent software
♦ Critical smith chart area determination
♦ Advanced convergence approaches (critical chart area avoided)
♦ Device safety
♦ Batch available (autonomous system)
– S parameters, I=f(V)
– Pout=f(Pin) @ ΓL(F0,2/3F0) constant
– Circle @ Pinj=cst, ΓL(F0) constant or Pinj, ΓL(2/3F0) constant
► Ultra wide band test set module (GPIB)
♦ Bandwidth @ f0: 1-40GHz
♦ Bandwidth @ f0 with matching @ 2f0: 2-18GHz
♦ CW or pulsed condition
– Pulse width min<1µs, Duty Cycle min<1%
♦ Max power handling in CW : 20W up to 18GHz, 10W > 26GHz
♦ Max power handling in pulsed condition depends on duty cycle :
– Ex: > 100W for duty cycle = 10% and PW=100µs
► Vector measurements of S11’, S21’, GL(@ f0and 2f0)
► Currents, voltages, injected input power measured
► GP, PAE, POUT, PE, Pabs calculated from measurements
► Very good accuracy thanks to a full vector calibration
► Reduction of DUT instability at low frequency
► No variation of the load @ F0 by adjusting the load @ 2f0
► For transistors FET or HBT in fixture or under RF probes
► No Matching limitation :
♦ Up to 18GHz @ Poutmax= 10W
♦ Up to 26GHz @ Poutmax= 4W
♦ Up to 40GHz @ Poutmax= 1W
HARMONIC ACTIVE LOADPULL SYSTEM UP TO 40GHZ: