Low-Volume & Multi-Project Service

SG25H1:

A high-performance 0.25 µm technology with npn-HBTs up to f_T/f_max= 180/220 GHz.

SG25H3:

A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (f_T/f_max= 110 GHz/180 GHz) to higher breakdown voltages up to 7 V.

SGB25V:

A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.

SG13S:

A high-performance 0.13 µm BiCMOS with npn-HBTs up to f_T / f_max= 250/300 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.

SG13G2:

A 0.13 µm BiCMOS technologies with same device portfolio as SG13S but much higher bipolar performance with f_T/f_max = 300/500 GHz

GD:

Additional integrated complementary RF LDMOS devices with nLDMOS up to 22 V, pLDMOS up to -16 V breakdown voltage and an isolated nLDMOS device. (available in SGB25V)

H3P:

Additional pnp-HBTs with f_T/f_max = 90/120 GHz for complementary bipolar applications. (available in SG25H3)

RF-MEMS switch:

Additional capacitive MEMS switch devices for frequencies between 30 GHz to 110 GHz. (available in SG25H1 and SG25H3 technology)

LBE:

The Localized Backside Etching module is offered to remove silicon locally to improve passive performance. (available in all technologies)

PIC:

Additional photonic design layers together with BiCMOS BEOL layers on SOI wafers. (available in SG25H1/H3)

SG25H1

npn1

npn2

A_E

0.21 x 0.84 µm²

0.18 x 0.84 µm²

Peak f_max

190 GHz

220 GHz

Peak f_T

190 GHz

180 GHz

BV_CE0

1.9 V

1.9 V

BV_CB0

4.5 V

5.0 V

V_A

40 V

40 V

ß

270

260

SG25H3

High Performance

Medium Voltage

High Voltage

PNP
H3P module

A_E

0.22 x 0.84 µm²

0.22 x 2.24 µm²

0.22 x 2.24 µm²

0.22 x 0.84 µm²

Peak f_max

180 GHz

140 GHz

80 GHz

120 GHz

Peak f_T

110 GHz

45 GHz

25 GHz

90 GHz

BV_CE0

2.3 V

5 V

>7 V

-2.5 V

BV_CB0

6.0 V

15.5 V

21.0 V

-4.0 V

V_A

30 V

30 V

30 V

30 V

ß

150

150

150

100

SGB25V

High Performance

Standard

High Voltage

A_E

0.42 x 0.84 µm²

0.42 x 0.84 µm²

0.42 x 0.84 µm²

Peak f_max

95 GHz

90 GHz

70 GHz

Peak f_T

75 GHz

45 GHz

25 GHz

BV_CE0

2.4 V

4.0 V

7.0 V

BV_CB0

>7 V

>15 V

>20 V

V_A

>50 V

>80 V

>100 V

ß

190

190

190

SG13S

npn13P

npn13V

A_E

0.12 x 0.48 µm²

0.18 x 1.02 µm²

Peak f_max

300 GHz

120 GHz

Peak f_T

250 GHz

45 GHz

BV_CE0

1.7 V

3.7 V

BV_CB0

5.0 V

15 V

ß

900

600

SG13G2

npn13g2

A_E

0.07 x 0.90 µm²

Peak f_max

500 GHz

Peak f_T

300 GHz

BV_CE0

1.7 V

BV_CB0

4.8 V

ß

650

Waveguide (single-mode@1550 nm)

Deep etched       3 dB cm

Shallow etched   1 dB/cm

Ge Photodetector (@1550 nm)

Responsivity (internal) 0.6 A/W

3 dB Bandwith > 25 GHz

SG25H1/H3*

SG13S***

Core Supply Voltage

2.5 V

3.3 V

1.2 V

nMOS

V_TH

0.6 V

0.65 V

0.49 V

I_OUT**

540 µA/µm

520 µA/µm

500 µA/µm

I_OFF

3 pA/µm

10 pA/µm

500 pA/µm

pMOS

V_TH

-0.6 V

-0.61 V

-0.42 V

I_OUT

-230 µA/µm

-220 µA/µm

-210 µA/µm

I_OFF

-3 pA/µm

-10 pA/µm

-500 pA/µm

* Parameters for SGB25V are similar                         ** @ VG = 2.5 V
*** Parameters for SG13G2 have to be defined

SG25H1/H3

SG25V

SG13S

MIM Capacitor

1 fF/µm²

1 fF/µm²

1.5 fF/µm²

N⁺ Poly Resistor

210 Ω/

210 Ω/

-

P⁺ Poly Resistor

280 Ω/

310 Ω/

250 Ω/

High Poly Resistor

1600 Ω/

2000 Ω/

1300 Ω/

Varactor C_max/C_min

3

tbd.

tbd.

Inductor Q@5 GHz

18 (1 nH)

18 (1 nH)

18 (1 nH)

Inductor Q@10 GHz

20 (1 nH)

20 (1 nH)

20 (1 nH)

Inductor Q@5 GHz

37 (1 nH)*

37 (1 nH)*

37 (1 nH)*

* with LBE

n-LDMOS

p-LDMOS

NLD2GD22C

iNLD2GD13A****

PLD2GD19B

BV_DSS*

22 V

15 V

-16 V

V_TH

0.55 V

0.6 V

-0.5 V

I_OUT**

460 µA/µm

440 µA/µm

-180 µA/µm

R_ON

4 Ωmm

4 Ωmm

15 Ωmm

Peak f_max***

52 GHz

50 GHz

30 GHz

Peak f_t***

20 GHz

28 GHz

9 GHz

*@50 pA/µm, **@V_G = 2.5 V , ***@V_DS= 4 V, ****substrate isolated

Actuation voltage

25 V

C_on/C_off

> 10

Switching time

< 10 µs

Temperature

-30 – 125°C

Isolation*

> 20 dB

Insertion loss*

< 1dB

Continuous power handling

13 dBm

*@60 GHz