MPW Schedule 2014 & 2015 and Price Information 2014

General Technology Description

 

SG25 is the basic 0.25 µm CMOS process. It provides Nmos, Pmos, isolated Nmos and passive components such as poly resistors and MIM capacitors. In addition to the basic CMOS process 3 frontend options and 2 aluminum backend options are offered.

 

The standard backend option offers 3 thin metal layers and two TopMetal layers (Top-Metal1 - fourth 2 µm thick metal layer, TopMetal2 – fifth 3 µm thick metal layer) and a MIM layer. Together with a high dielectric stack this enables increased RF passive component performance.

 

SG25H1 technology is a high performance BiCMOS technology. The bipolar module H1 is based on SiGe:C npn-HBTs with up to 190GHz transient frequencies and up to 220GHz oscillation frequencies.

 

SG25H3 technology is a BiCMOS technology, too. The bipolar module H3 based on SiGe:C npn-HBT with up to 110 GHz transient frequencies and up to 180 GHz oscillation frequencies. Additionally, SiGe:C npn-HBTs with breakdown voltages (BVCE0) up to 7 V are offered.

 

SG25H3P technology is a high-performance complementary BiCMOS technology. In addition to the bipolar module from SG25H3 a high-performance SiGe:C pnp-HBT with up to 90 GHz transient frequencies and 120 GHz oscillation frequencies is offered.

 

SGB25V is a 21-mask BiCMOS process which combines a 0.25 µm CMOS core with 3types of SiGe:C HBTs.

 

SGB25RH is a special variant of SGB25V which includes radiation hard IP for space applications.

 

GD module (SGB25V) adds, by 3 mask steps, a complementary LDMOS module to the SGB25V process (nLDMOS up to 22 V, pLDMOS up to -16 V breakdown voltage and an isolated nLDMOS device).

 

SG13S technology has a very high bipolar performance with up to 250 GHz transient frequencies and up to 300 GHz oscillation frequencies. The process offers a 7-layer Al-BEOL, including a MIM capacitor. 5 thin metal layers are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 µm thick metal layer, TopMetal2 – 3 µm thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage. Further digital IP is available.

 

SG13C technology is an RF CMOS technology which includes all features of SG13S, but no bipolar HBTs.

 

SG13G2 technology has a very high bipolar performance with up to 300 GHz transient frequencies and up to 500 GHz oscillation frequencies. The process offers a 7-layer Al-BEOL, including a MIM capacitor. 5 thin metal layer are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 µm thick metal layer, TopMetal2 – 3 µm thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage.

 

RFMEMS module is an additional option in SG25H1 and SG25H3 technologies which offers integrated capacitive RFMEMS switch devices for frequencies between 30 GHz to 110 GHz.

 

LBE module (Localized Backside Etching) is offered in all technologies to remove silicon locally to improve passive performance.

  

BEOL (only) Backend of Line Runs are offered for testing of passive structures only. Produced are Metal1 and all layers above. These runs are offered either for 0.25 µm BEOL layer stack (SG25) or 0.13 µm layer stack (SG13). RF-MEMS switch and LBE can be ordered together with BEOL (only) runs.  

 

SG25_PIC MPW run Silicon Photonic plus SG25 Backend of Line. These runs offering Photonic devices like Waveguide implantations, a Ge Photodiode and SG25 BEOL layer stack. LBE can be used as option within this run.

2.1 MPW Price Information 2014

Non Commercial Access

 

For European non profit and educational institutions a discount of 25 % is offered via Europractice and there is no minimum size requirement for all runs marked with x only.

 

Further costs for using LBE module in all technologies and RFMEMS module in SG25H3 and SG25H1 are reduced to 2500 € per order and technology.

• www.europractice-ic.com

2.1.1 Prices for technologies 

Process	Area Price / mm2
SGB25V	€ 2500
SG25H1	€ 6500
SG25H3	€ 3800
SG13S	€ 7000
SG13C	€ 4500
SG13G2	€ 7500

2.1.2 Prices for modules

 

Module (Process)	Price
GD (SGB25V)	€ 450 (per mm2)
PNP (SG25H3)	€ 2000 (per mm2)
LBE (all)	5000 € per order and technology
RFMEMS switch (H1, H3)	10000€ per order and technology
BEOL (only) 0.25µm (SG25)	€ 800 (per mm2)
BEOL (only) 0.13µm (SG13)	€ 1000 (per mm2)
SG25_PIC	€ 2000 (per mm2)

 

 

2.2 MPW Schedule 2014

2.2.1 Schedule for complete technologies

TAPE IN	Shipment	SGB25		SG25		SG13
		V	RH	H1	H3	S (C)	G2
Nov 04, 13	Feb 143	x	x	x	x
Dec 16, 13	Apr 21, 14					x	x
Feb 10, 14	May 05, 14	x	x2	x1
Apr 07, 14	Jul 28, 14					x	x
Apr 28, 14	Jul 21, 14	x	x2		x
Jul 28, 14	Nov 18, 14					x	x
Sep 01, 14	Nov 24, 14	x	x2	x1	x
Nov 03, 14	Feb 153	x	x	x	x
Dec 15, 14	Apr 20, 15					x	x

¹ Shipment 7 days later

² Shipment 21 days later

³ Run without priority

      0.13 µm Runs

 

2.2.2 Schedule for modules

TAPE IN	Shipment (standard)	GD	H3P	RF-MEMS switch	LBE1	TSV2
Nov 04, 13	March 14	x	x	x	x
Feb 10, 14	May 26, 14			x	x
Apr 28, 14	Aug 25, 14	x		x	x
Sep 01, 14	Jan 05, 15	x	x	x	x
Nov 03, 14	March 15			x	x	x

¹ Localized Backside Etching shipment 12 days later than standard shipment

² TSV shipment tbd.

 

2.2.3 BEOL (only) runs

TAPE IN	Shipment	SG25	SG13	RF-MEMS switch	LBE	SG25_PIC   TSV
March 14	May 14	x		x	x
Aug 11, 14	Oct 14	x		x	x	x               x
Oct 14	Dec 14		x		x

2.3 MPW Schedule 2015

Changes are possible till October 1^st 2014.

 

2.3.1 Schedule for complete technologies

TAPE IN	Shipment	SGB25		SG25		SG13
		V	RH	H1	H3	S (C)	G2
Nov 03, 14	Feb 15	x	x2	x1	x3
Dec 15, 14	Apr 21, 15					x	x
Feb 09, 15	May 04, 15	x	x2	x1
Apr 20, 15	Jul 13, 15	x	x2		x
Aug 24, 15	Dec 14, 15					x	x
Sep 07, 15	Nov 30, 15	x	x2	x1	x
Dec 14, 15	Apr 20, 16					x	x

¹ Shipment 7 days later

² Shipment 21 days later

³ Run without priority

    0.13 µm Runs

 

2.3.2 Schedule for modules

TAPE IN	Shipment (standard)	GD	H3P	RF-MEMS switch1	LBE1	TSV2
Nov 03, 14	March 15			x	x	x
Feb 09, 15	May 25, 15	x	x	x	x
Apr 28, 15	Aug 24, 15			x	x	x
Sep 07, 15	Jan 18, 16	x	x	x	x

¹ Localized Backside Etching shipment 12 days later than standard shipment

² TSV shipment tbd.

 

2.4 Information on Minimum Size per MPW Run 2014

There is no minimum area request if a technology or module is offered in schedule tables under point 2.2 and 2.3.

If this is not the case, a technology or module can be ordered with a minimum area given in the following table. A waiver from foundry and registration 4 weeks before TAPE out is necessary in this case.

Process	Min Area [mm²]	Min Area1 for Discount
SG25H1	10	10
SG25H3	12	15
SG25H3P	10	12
SGB25V	-	17
SGB25RH	10	20
GD-Module	15	20
SG13S	-	10
SG13C	-	no
SG13G2	-	10

¹ Ask for special price if you need more than this area for one MPW run

Delivery

 

40 diced samples, E-test data including RF measurements. Original wafer thickness is 750 µm. After back lapping sample thicknesses of 200 µm and 300 µm are available without additional costs. 

Hot lots and additional dies are available upon request.

Engineering Runs

An engineering run consists of a separate mask set and the delivery of six wafers. For an Engineering Run a minimum lot size of 18 wafer will be started. Few wafer will be stopped as backup before Backend. Additional wafers are available upon request. Total test field area is 10.62mm times 21.87mm = 232.3 mm2. To calculate the usable area for customers you have to subtract test structure area.