International MOS-AK Workshop , XiAn, China August 11-13, 2021

Invited talks (12th -13th . August, 45min for each): 不分先后

Substrate RF non-linear characterization and modeling -Dr . Martin Rack ,  UCLouvain

Towad reliability-aware physics-based FET compact models- Dr.  Ben Kaczer,  IMEC

Compact Transistor Model Parameter Extraction: Chanllenges and Directions- Dr. Zhihong Liu , Primarius Technologies

Leakage and Interface Issues in GaN-based HEMTs- Prof. Jie Jie Zhu, Xidian University

l Characterization and Modeling of AlGaN/GaN Trapping Transients- Prof. J.C.Pedro University of Aveiro 

l Material Growth and Material Characterization for Conventional & Nanoelectronic Devices Applications: An Innovative Prospective -Dr. Praveen Kumar Saxena, Tech Next Lab 

Impact of Extended Defects on the yield and Performance of 4H-SiC Power Devices- Holger Schlichting , Fraunhofer IISB 

Practice Invited Talk (25-30 min): 

 * IV characteristics of SiC Power MOSFETs in the high voltage saturation region- Cristino Salcines 

         University of  Stuttgart&Robert Bosch GmbH



        Dr. Martin Rack is a senior researcher at Université catholique de Louvain. His main interests are substrate and device modeling, characterization and optimization towards successful monolithic integration of RF and mm-wave functionalities using silicon technologies.To that end he is involved in the complete modeling of semiconductor substrates for the evaluation of their impact on the performance of RF and mm-wave front-end circuitry. In particular, he is working on taking substrate effects into account during the design of mm-wave switches and LNAs in advanced SOI nodes. He is also implicated in the development of large-signal models of the non-linear behavior of semiconductor substrate interfaces for the evaluation of substrate-induced harmonic distortion in RF and mm-wave systems.

Dr. Ben Kaczer is a Scientific Director in the FEOL reliability group (DRE) at imec. Dr. Kaczer received the M.S. degree in Physical Electronics from Charles University, Prague, in 1992 and the M.S. and Ph.D. degrees in Physics from The Ohio State University, in 1996 and 1998, respectively.   For his Ph.D. research on the ballistic-electron emission microscopy of SiO2 and SiC films he received the OSU Presidential Fellowship and support from Texas Instruments, Inc.   In 1998 he joined the reliability group of imec, Leuven, Belgium, where his activities have included the research of the degradation phenomena and reliability assessment of SiO2, SiON, high-k, and ferroelectric films, planar and multiple-gate FETs, circuits, and characterization of Ge, SiGe, III-V, and MIM devices.  He has co-authored more than 500 journal and conference papers and 4 patent applications related to device and circuit reliability, presented a number of invited papers and tutorials, and received 6 IEEE International Reliability Physics Symposium (IRPS) Best and Outstanding Paper Awards, 2 IEEE IPFA Best Paper Awards, and the 2011 IEEE EDS Paul Rappaport Award.  In 2019 he was historically the most cited author of IRPS.  His h-index on Google Scholar is 60.  

       Dr. Kaczer has served twice as the chair of the Characterization, Reliability and Yield subcommittee of the International Electron Device Meeting (IEDM; 2007 and 2015) and as a member of various subcommittees of the IRPS (2002—2016) and is currently serving as a member of IRPS management committee (2018—).  He was the General Chair of the Semiconductor Interfaces Specialists Conference (SISC; 2006) and continues to act as the conference secretary (2007—).  He co-organized the INFOS conference (2005), and served on the INFOS, WoDiM, IPFA, and ICICDT conference committees.  He has served on the Editorial Board of IEEE journal of Transaction of Electron Devices for three terms (2011—2019).



       Dr. Zhihong Liu currently serves as the Chief Executive Officer and the   Chairman of the Board of Primarius Technologies Co., Ltd. He was the Corporate Vice President for CSV R&D at Cadence Design Systems Inc. Dr. Liu co-founded BTA Technology Inc. in 1993 and invented BSIMPro, the world's most leading Spice modeling product. He also served as the President & CEO of BTA Technology Inc. and later Celestry Design Technology Inc., which was acquired by Cadence in 2003.

   Dr. Liu holds a Ph.D. degree in EE from the University of Hong Kong and co-developed the industry's first standard model (BSIM3) for IC designs as one of the main contributors at the University of California at Berkeley.

           Dr. Liu has published nearly 100 technical papers, got the IEDM Best Paper Award, and holds more than 10 US and China patents.

        Prof. Jiejie Zhu received his B.S. degree in Electronic Science and Technology from Xidian University, Xi’an, China in 2011, and earned the PhD Degree in Materials Physics and Chemistry from Xidian University in 2016, where he is currently an associate professor in the School of Microelectronics. From 2019 to 2020, he made one-year postdoctoral research in University of Bristol, U.K. Prof. Zhu has more than 50 publications in international journals and conference proceedings including IEEE EDL, IEEE T-ED, APL, et al. He has also been granted 16 patents on GaN RF or power device technologies. His current research is focused on developing GaN high-frequency devices and the critical issues for wireless communication applications.

             Prof. Zhu is a Member of Electronic Materials and Devices Expert Committee and a Member of IEEE. He also served as the reviewer of several international journals, and was elected in the Golden List of Reviewers for IEEE Transactions on Electron Device in 2018 and 2019. He has ever been awarded the Excellent PhD Dissertation of Shaanxi Province, and twice awarded the First-Level Provincial Science and Technology Prize. 

​        Prof. José C. Pedro received the diploma, doctoral and habilitation degrees in electronics and telecommunications engineering, from University of Aveiro, Portugal, in 1985, 1993 and 2002, respectively. Currently he is a Full Professor at the same University, and the head of Institute of Telecommunications.

  His main scientific interests include active device modeling and the analysis and design of various nonlinear microwave circuits. He has authored or co-authored 2 books and more than 200 papers in international journals and symposia, and served the scientific community as IEEE MTT-S Distinguished Microwave Lecturer and reviewer of the most prominent journals and symposia of his field. In particular, he was, first, Associate Editor, and then Editor in Chief, for the IEEE Transactions on Microwave Theory and Techniques.

       Prof. Pedro received the Marconi Young Scientist Award in 1993, the 2000 Institution of Electrical Engineers (IEE) Measurement Prize and the 2016 IEEE MTT-S Distinguished Educator Award. In 2007 he was elected Fellow of the IEEE for his contributions to the nonlinear distortion analysis of microwave devices and circuits.

     Dr. Praveen Kumar Saxena is the Chief Executive officer and Chief Technology Officer. Praveen holds a Ph.D. in Electronics Engineering from IIT, Banaras Hindu University, India. He has vast experience in the Modeling & Designs of different semiconductor technologies including material growth, characterization and device applications. Praveen has several years of experience in academia & industry. Praveen has collaborated with several leading companies that include Australia (ASMC), Malaysia (Silterra), Singapore (Numonyx, STMicro, TechSemi, IHPC,IMRE etc.), India (SCL Mohali, SAC Ahmedabad, DRDO, ISRO etc), Indonesia and China TCAD/EDA industry customers on process and device modeling. During his tenure in capacity South East Asia, Praveen served as the at Silvaco Singapore for several years. Praveen is recipient of several national & international awards. Praveen has successfully delivered several software & hardware projects to Indian Defense and Indian Space Agencies. Recently, he delivered Radiation Monitoring System Hardware that will be used in the next Indian Lunar mission by Indian Space Agency. Praveen also has many reputed publications under his belt.

Practice Invited Talk (25-30 min): 

IV characteristics of SiC Power MOSFETs in the high voltage saturation region- Cristino Salcines 

                (University of  Stuttgart&Robert Bosch GmbH)

Cristino Salcines received his engineer's and master's degrees in telecommunications engineering from the University of Cantabria in 2010 and 2011 respectively. In 2013 he joined the institute of robust power semiconductor systems (ILH) at the University of Stuttgart, Germany, as a research associate, where he is currently pursuing his PhD. Since 2019 he works for the automotive electronics (AE) division of Robert Bosch GmbH in Reutlingen, Germany, as power semiconductor device modelling engineer.