l Substrate RF non-linear characterization and modeling -Dr . Martin Rack , UCLouvain
l Towad reliability-aware physics-based FET compact models- Dr. Ben Kaczer, IMEC
l Compact Transistor Model Parameter Extraction: Chanllenges and Directions- Dr. Zhihong Liu , Primarius Technologies
l Leakage and Interface Issues in GaN-based HEMTs- Prof. Jie Jie Zhu, Xidian University
l Characterization and Modeling of AlGaN/GaN Trapping Transients- Prof. J.C.Pedro, University of Aveiro
l Material Growth and Material Characterization for Conventional & Nanoelectronic Devices Applications: An Innovative Prospective -Dr. Praveen Kumar Saxena, Tech Next Lab
l Impact of Extended Defects on the yield and Performance of 4H-SiC Power Devices- Holger Schlichting , Fraunhofer IISB
Practice Invited Talk (25-30 min):
* IV characteristics of SiC Power MOSFETs in the high voltage saturation region- Cristino Salcines
University of Stuttgart&Robert Bosch GmbH
Practice Invited Talk (25-30 min):
* IV characteristics of SiC Power MOSFETs in the high voltage saturation region- Cristino Salcines
(University of Stuttgart&Robert Bosch GmbH)
Cristino Salcines received his engineer's and master's degrees in telecommunications engineering from the University of Cantabria in 2010 and 2011 respectively. In 2013 he joined the institute of robust power semiconductor systems (ILH) at the University of Stuttgart, Germany, as a research associate, where he is currently pursuing his PhD. Since 2019 he works for the automotive electronics (AE) division of Robert Bosch GmbH in Reutlingen, Germany, as power semiconductor device modelling engineer.